Part Number Hot Search : 
20N1600 10200 BD205 CFY77 HC4094 BSS82C DI104S 1010C
Product Description
Full Text Search
 

To Download BD647 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION *With TO-220C package *Complement to type BD646/648/650/652 *DARLINGTON APPLICATIONS *For use in output stages in audio equipment ,general amplifier,and analogue switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
BD645/647/649/651
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER BD645 VCBO Collector-base voltage BD647 BD649 BD651 BD645 VCEO Collector-emitter voltage BD647 BD649 BD651 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 140 60 80 100 120 5 8 12 0.3 62.5 150 -65~150 V A A mA W V V UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BD645 Collector-emitter breakdown voltage BD647 IC=30mA, IB=0 BD649 BD651 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD645 BD647 ICBO Collector cut-off current BD649 BD651 BD645 BD647 ICEO Collector cut-off current BD649 BD651 IEBO hFE Emitter cut-off current DC current gain VCE=50V, IB=0 VCE=60V, IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=3A ,IB=12mA IC=5A ,IB=50mA IC=5A ,IB=50mA IC=3A ; VCE=3V VCB=60V, IE=0 VCB=40V, IE=0 ;TC=150 VCB=80V, IE=0 VCB=50V, IE=0 ;TC=150 VCB=100V, IE=0 VCB=60V, IE=0 ;TC=150 VCB=120V, IE=0 VCB=70V, IE=0 ;TC=150 VCE=30V, IB=0 VCE=40V, IB=0 CONDITIONS SYMBOL
BD645/647/649/651
MIN 60 80
TYP.
MAX
UNIT
V(BR)CEO
V 100 120 2.0 2.5 3.0 2.5 0.2 2.0 0.2 2.0 0.2 2.0 0.2 2.0 mA V V V V
0.5
mA
5 750
mA
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 2.0 UNIT /W
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BD645/647/649/651
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD645/647/649/651
4


▲Up To Search▲   

 
Price & Availability of BD647

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X